DocumentCode
1164514
Title
Sub-0.1 μm MOSFET modelling and circuit simulation
Author
Ytterdal, Trond ; Shur, Michael S. ; Fjeldly, T.A.
Author_Institution
Dept. of Phys. Electron., Trondheim Univ.
Volume
30
Issue
18
fYear
1994
fDate
9/1/1994 12:00:00 AM
Firstpage
1545
Lastpage
1546
Abstract
The authors present the results of device modelling and circuit simulation of recently reported sub-0.1 μm nMOSFET devices and obtain excellent agreement with experimental data both at 300 K and at cryogenic temperatures. The approach accurately describes the subthreshold regime, short channel effects, and the notoriously difficult knee region of the characteristics, making the model suitable for deep submicrometre integrated circuit simulation
Keywords
circuit analysis computing; insulated gate field effect transistors; semiconductor device models; 0.1 micron; 300 K; circuit simulation; cryogenic temperatures; deep submicrometre integrated circuit simulation; device modelling; electrical characteristics; knee region; short channel effects; sub-0.1 μm nMOSFET devices; subthreshold regime;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941032
Filename
317069
Link To Document