• DocumentCode
    1164525
  • Title

    Threshold voltage mismatch in short-channel MOS transistors

  • Author

    Steyaert, M. ; Bastos, Joao ; Roovers, R. ; Kinget, Peter ; Sansen, Willy ; Graindourze, B. ; Pergoot, A. ; Janssens, Erik

  • Author_Institution
    Dept. of Electr. Eng., Katholieke Univ., Leuven
  • Volume
    30
  • Issue
    18
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1546
  • Lastpage
    1548
  • Abstract
    The threshold voltage matching dependency on device area is investigated for a standard 1.2 μm CMOS technology. A deviation from the linear dependency of the threshold voltage matching on the inverse of the square root of the effective channel area is observed for transistors of 1.21 μm channel length
  • Keywords
    CMOS integrated circuits; insulated gate field effect transistors; 1.2 micron; CMOS technology; channel length; device area; effective channel area; linear dependency; short-channel MOS transistors; threshold voltage matching; threshold voltage mismatch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940999
  • Filename
    317070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164525