Title :
20W CW monolithic AlGaAs (810 nm) laser diode arrays
Author :
Sakamoto, Makoto ; Scifres, D.R.
Author_Institution :
Spectra Diodes Labs., San Jose, CA, USA
Abstract :
Good continuous-wave (CW) lifetimes have been demonstrated for 1 cm wide monolithic AlGaAs laser diode arrays (810 nm) with a 4800 mu m total aperture width at a power level of 20 W. This represents the highest CW power level at which long lifetimes have been obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical pumping; semiconductor laser arrays; 20 W; 4800 micron; 810 nm; AlGaAs laser diode arrays; CW lifetimes; power level; total aperture width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920111
