Theoretical Analysis of a Low Dispersion SiGe LNA for Ultra-Wideband Applications

Author

Park, Yunseo ; Lee, Chang-Ho ; Cressler, John D. ; Laskar, Joy

Author_Institution

Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA

Volume

16

Issue

9

fYear

2006

Firstpage

517

Lastpage

519

Abstract

We demonstrate a low dc power consumption SiGe heterojunction bipolar transistor (HBT) low noise amplifier (LNA) for ultra-wideband (UWB) applications covering the 0.5GHz to 10GHz band. Using theoretical analysis, the dominant design factor for low group delay variation is identified and applied to UWB LNA design. The implemented SiGe LNA achieves a gain of 13dB, a minimum noise figure of 3.3dB, and an IIP3 of -7.5dBm between 0.5GHz and 10GHz, while consuming a dc power of only 9.6mW. This SiGe UWB LNA exhibits less than 22ps of uniform group delay variation over the entire band. To the best of the authors´ knowledge, this is the first attempt to analyze the effects of group delay variation on the operation of wideband LNAs

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; integrated circuit design; low noise amplifiers; low-power electronics; network analysis; wideband amplifiers; 0.5 to 10 GHz; 13 dB; 3.3 dB; 9.6 mW; SiGe; group delay variation; heterojunction bipolar transistor; low dc power consumption; low noise amplifier; ultra wideband amplifier; Bandwidth; Circuits; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Pulse amplifiers; Silicon germanium; Ultra wideband technology; Group delay variation; SiGe heterojunction bipolar transistor (HBT); low noise amplifier (LNA); noise figure; ultra-wideband (UWB);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.880698

Filename

1683811