Hot-electron immunity of SiO/sub 2/ dielectrics with fluorine incorporation

Author

Wright, Peter J. ; Kasai, Naoki ; Inoue, Shunsuke ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

10

Issue

8

fYear

1989

Firstpage

347

Lastpage

348

Abstract

The effect of fluorine incorporation in the gate oxide on the NMOSFET hot-electron immunity is examined. Fluorine is implanted in the polysilicon gate and diffused into the gate oxide. The hot-electron immunity of NMOSFETs is shown to increase with increasing fluorine doses. Measurement of device lifetime against substrate current shows that higher doses of fluorine lead to a change in the immunity to interface trap generation. Based on the results of Auger measurements, this has been correlated with a fluorine deficient layer near the interface.<>

Keywords

Auger effect; fluorine; hot carriers; insulated gate field effect transistors; interface electron states; ion implantation; life testing; semiconductor device testing; silicon compounds; Auger measurements; NMOSFET hot-electron immunity; SiO/sub 2/:F gate dielectrics; device lifetime; fluorine deficient layer; gate oxide; interface trap generation; polysilicon gate; substrate current; Current measurement; Degradation; Dielectric measurements; Dielectric substrates; Electric breakdown; Implants; Ion implantation; MOSFET circuits; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31752

Filename

31752