Title :
A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage
Author :
Zeisse, C.R. ; Nguyen, Richard ; Messick, L.J. ; Saunier, Paul ; Moazed, K.L.
Author_Institution :
US Naval Ocean Syst. Center, San Diego, CA, USA
Abstract :
The fabrication and performance of a JFET which is made by diffusing zinc into an epitaxial channel of indium phosphide grown by MOCVD on a semi-insulating InP(Fe) substrate are presented. The total gate length is 2.4 mu m. At 0-V gate bias the transconductance is 140 mS/mm, the gate-source capacitance is 3.0 pF/mm, and the output conductance is less than 0.5 mS/mm. At -2-V gate bias the leakage from gate to source is 4 nA/mm. The drift in drain-source current is less than +or-1% after 10/sup 6/ s under continual DC bias.<>
Keywords :
III-V semiconductors; indium compounds; junction gate field effect transistors; leakage currents; semiconductor growth; vapour phase epitaxial growth; zinc; 140 mS; 2.4 micron; 3 pF; InP:Fe substrate; InP:Zn-InP:Fe; JFET; MOCVD; diffused junction field-effect transistor; drain-source current; gate length; gate-source capacitance; high gain; low leakage; output conductance; transconductance; Capacitance; FETs; Indium phosphide; Insulation; Integrated optoelectronics; MOCVD; Optical receivers; Substrates; Transconductance; Zinc;
Journal_Title :
Electron Device Letters, IEEE
