DocumentCode :
1166425
Title :
A Capless 
p-HEMT Having a Self-Aligned Gate Structure
p-HEMT Having a Self-Aligned Gate StructureAuthor :
Kim, Tae-Woo ; Jo, Seong June ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol.
Volume :
27
Issue :
9
fYear :
2006
Firstpage :
722
Lastpage :
724
Abstract :
Characteristics of a 0.2-mum capless InAlAs/InGaAs pseudomorphic high electron mobility transistor (p-HEMT) having a self-aligned gate (SAG) were investigated. The 0.2-mum SAG capless p-HEMT showed a source resistance comparable to that of a conventional recessed p-HEMT having a heavily n-doped In0.53Ga0.47As cap layer primarily due to the SAG and optimized ohmic-metallization processes and excellent characteristics of Gm,max, fT, and fmax of 1.12 S/mm, 185 GHz, and 225 GHz, respectively, even without a heavily doped InGaAs cap layer. The capless device exhibited much better device parameters for digital logic applications including I ON/IOFF and subthreshold slope (1.27times104 and 78 mV/dec) compared with those (5.1times103 and 120 mV/dec) of the conventional recessed device, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; logic gates; semiconductor device metallisation; semiconductor doping; 0.2 micron; InP-In0.52Al0.48As-In0.53Ga 0.47As; capless p-HEMT; capless pseudomorphic high electron mobility transistor; digital logic applications; optimized ohmic-metallization processes; self-aligned gate structure; semiconductor doping; Electron mobility; Etching; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Information technology; MODFETs; PHEMTs; Capless p-HEMT; gate recess; pseudomorphic high electron mobility transistor (p-HEMT); self-aligned gate (SAG); subthreshold slope;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.881114
Filename :
1683858
Link To Document :
