DocumentCode
1166493
Title
High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
Author
Campbell, J.C. ; Tsang, W.T. ; Qua, G.J. ; Johnson, B.C.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
24
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
496
Lastpage
500
Abstract
High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of breakdown), good external quantum efficiency (greater than 90% at a wavelength of 1.3 mu m), and high avalanche gain ( approximately=40). In the low-gain regime, bandwidths as high as 8 GHz have been achieved. At higher gains, a gain-bandwidth-limited response is observed; the gain-bandwidth product is 70 GHz.<>
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; vapour phase epitaxial growth; 1.3 micron; 50 nA; APDs; InP-InGaAsP-InGaAs; avalanche gain; avalanche photodiodes; chemical beam epitaxy; gain-bandwidth product; gain-bandwidth-limited response; low dark current; quantum efficiency; semiconductors; Avalanche photodiodes; Bandwidth; Chemicals; Dark current; Epitaxial growth; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; PIN photodiodes;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.151
Filename
151
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