Title :
High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
Author :
Campbell, J.C. ; Tsang, W.T. ; Qua, G.J. ; Johnson, B.C.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of breakdown), good external quantum efficiency (greater than 90% at a wavelength of 1.3 mu m), and high avalanche gain ( approximately=40). In the low-gain regime, bandwidths as high as 8 GHz have been achieved. At higher gains, a gain-bandwidth-limited response is observed; the gain-bandwidth product is 70 GHz.<>
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; vapour phase epitaxial growth; 1.3 micron; 50 nA; APDs; InP-InGaAsP-InGaAs; avalanche gain; avalanche photodiodes; chemical beam epitaxy; gain-bandwidth product; gain-bandwidth-limited response; low dark current; quantum efficiency; semiconductors; Avalanche photodiodes; Bandwidth; Chemicals; Dark current; Epitaxial growth; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; PIN photodiodes;
Journal_Title :
Quantum Electronics, IEEE Journal of
