Quasi-direct UV/blue GaP avalanche photodetectors

Author

Beck, Ariane L. ; Yang, Bo ; Wang, S. ; Collins, Charles J. ; Campbell, Joe C. ; Yulius, Aristo ; Chen, An ; Woodall, Jerry M.

Author_Institution

Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA

Volume

40

Issue

12

fYear

2004

Firstpage

1695

Lastpage

1699

Abstract

GaP avalanche photodiodes, with thin device layers have been processed, utilizing both p-i-n and recessed window p-i-n structures, as well as a Schottky structure. The results showed low dark currents, good quantum efficiency (QE), and high gains up to 10³, with good uniformity across the wafer. The peak QE at 440 nm indicated Γ-valley absorption, rather than band-edge absorption. The recess window photodiodes exhibited enhanced UV detection as a result of reduced absorption and recombination in the undepleted p-layer. Additionally, the Schottky structure demonstrated potential for further enhanced UV detection, by employing a thin semitransparent contact.

Keywords

III-V semiconductors; Schottky barriers; avalanche photodiodes; dark conductivity; gallium compounds; p-i-n photodiodes; photodetectors; ultraviolet detectors; Γ-valley absorption; 440 nm; GaP; GaP avalanche photodetectors; GaP avalanche photodiodes; Schottky structure; UV detection; dark currents; optical gains; p-i-n structures; quantum efficiency; quasidirect UV/blue photodetectors; recess window photodiodes; recessed window p-i-n structures; recombination; reduced absorption; thin device layers; thin semitransparent contact; undepleted p-layer; Aluminum gallium nitride; Avalanche breakdown; Costs; Dark current; Electromagnetic wave absorption; Gallium nitride; PIN photodiodes; Photodetectors; Semiconductor device noise; Silicon carbide; 65; Avalanche photodiodes; photodetectors; ultraviolet;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2004.837788

Filename

1359977