• DocumentCode
    1167056
  • Title

    Analog Decoder Performance Degradation Due to BJTs´ Parasitic Elements

  • Author

    Duchaux, Nicolas ; Lahuec, Cyril ; Arzel, Matthieu ; Seguin, Fabrice

  • Author_Institution
    Electron. Eng. Dept., Telecom Bretagne, Brest, France
  • Volume
    56
  • Issue
    11
  • fYear
    2009
  • Firstpage
    2402
  • Lastpage
    2410
  • Abstract
    This paper presents the effect of bipolar junction transistors´ (BJTs) parasitic elements on the decoding performance of a BiCMOS analog decoder. The transistors´ parasitic effects are taken into account to develop a more accurate behavioral model of the computing nodes. The model is applied to double-binary 0.25-mum BiCMOS analog decoders. Behavioral simulations show that the BJTs´ parasitic elements deteriorate the error-correcting performance of a stand-alone a posteriori probability (APP) decoder by 0.5 dB compared with the ideal bit error rate (BER). In a turbo scheme, the loss is reduced to 0.2 dB for a BER that is smaller than 10-2. A simple solution based on an nMOS amplifier is proposed to counterbalance the dominant parasitic element. The amplifier reduces the degradation by 0.2 dB for the APP decoder. However, the turbo decoder is improved only for a BER above 10-2.
  • Keywords
    BiCMOS analogue integrated circuits; bipolar transistor circuits; decoding; APP decoder; BJT; bipolar junction transistors; decoding performance; double-binary BiCMOS analog decoders; error-correcting performance; nMOS amplifier; parasitic elements; size 0.25 mum; stand-alone a posteriori probability decoder; turbo scheme; Analog decoding; BiCMOS; behavioral modeling; parasitic elements;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2009.2015727
  • Filename
    4785486