DocumentCode
1167056
Title
Analog Decoder Performance Degradation Due to BJTs´ Parasitic Elements
Author
Duchaux, Nicolas ; Lahuec, Cyril ; Arzel, Matthieu ; Seguin, Fabrice
Author_Institution
Electron. Eng. Dept., Telecom Bretagne, Brest, France
Volume
56
Issue
11
fYear
2009
Firstpage
2402
Lastpage
2410
Abstract
This paper presents the effect of bipolar junction transistors´ (BJTs) parasitic elements on the decoding performance of a BiCMOS analog decoder. The transistors´ parasitic effects are taken into account to develop a more accurate behavioral model of the computing nodes. The model is applied to double-binary 0.25-mum BiCMOS analog decoders. Behavioral simulations show that the BJTs´ parasitic elements deteriorate the error-correcting performance of a stand-alone a posteriori probability (APP) decoder by 0.5 dB compared with the ideal bit error rate (BER). In a turbo scheme, the loss is reduced to 0.2 dB for a BER that is smaller than 10-2. A simple solution based on an nMOS amplifier is proposed to counterbalance the dominant parasitic element. The amplifier reduces the degradation by 0.2 dB for the APP decoder. However, the turbo decoder is improved only for a BER above 10-2.
Keywords
BiCMOS analogue integrated circuits; bipolar transistor circuits; decoding; APP decoder; BJT; bipolar junction transistors; decoding performance; double-binary BiCMOS analog decoders; error-correcting performance; nMOS amplifier; parasitic elements; size 0.25 mum; stand-alone a posteriori probability decoder; turbo scheme; Analog decoding; BiCMOS; behavioral modeling; parasitic elements;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2009.2015727
Filename
4785486
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