Performance of GaAs MESFET´s on InP substrates

Author

Ren, F. ; Hobson, W.S. ; Pearton, S.J. ; Oster, L.J. ; Smith, P.R.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

10

Issue

8

fYear

1989

Firstpage

389

Lastpage

390

Abstract

The fabrication of GaAs MESFET´s with 0.9- mu m gate length on InP substrates, after growth of the heteroepitaxial material by metalorganic chemical vapor deposition (MOCVD) is described. The MESFETs exhibit extrinsic transconductances of 377 mS-mm/sup -1/, the highest value yet reported for GaAs-on-InP devices. The drain I-V characteristic shows excellent saturation, a knee voltage of 0.75 V, and no light sensitivity. A unity current-gain cutoff frequency of 22 GHz and a maximum frequency of oscillation of 30 GHz are obtained for these MESFETs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; 0.75 V; 0.9 micron; 22 GHz; 30 GHz; 377 mS; InP substrates; MESFETs; drain I-V characteristic; extrinsic transconductances; gate length; heteroepitaxial material; knee voltage; maximum frequency of oscillation; metalorganic chemical vapor deposition; unity current-gain cutoff frequency; Chemical vapor deposition; Cutoff frequency; Fabrication; Gallium arsenide; Indium phosphide; Inorganic materials; Knee; MESFETs; MOCVD; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31766

Filename

31766