New Curvature-Compensation Technique for CMOS Bandgap Reference With Sub-1-V Operation

Author

Ker, Ming-Dou ; Chen, Jung-Sheng

Author_Institution

Nanoelectronics & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu

Volume

53

Issue

8

fYear

2006

Firstpage

667

Lastpage

671

Abstract

A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic n-p-n and p-n-p bipolar junction transistor devices in the CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-mum CMOS process. The experimental results have confirmed that, with the minimum supply voltage of 0.9 V, the output reference voltage at 536 mV has a temperature coefficient of 19.5 ppm/degC from 0 degC to 100 degC. With a 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz

Keywords

CMOS integrated circuits; bipolar transistor circuits; network synthesis; reference circuits; 0 to 100 C; 0.25 micron; 0.9 V; 536 mV; CMOS bandgap reference; CMOS process; bandgap voltage reference; curvature-compensation technique; parasitic bipolar junction transistor devices; sub-1V operation; CMOS process; CMOS technology; Circuits; Mirrors; P-n junctions; Photonic band gap; Power measurement; Silicon; Temperature; Voltage; Bandgap voltage reference; curvature-compensation technique; temperature coefficient; voltage reference;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2006.876377

Filename

1683977