Geometrical effects in high current gain 1100-V 4H-SiC BJTs

Author

Domeij, M. ; Lee, H.-S. ; Danielsson, E. ; Zetterling, C.-M. ; Ostling, M. ; Schoner, A.

Author_Institution

Dept. of Microelectron. & Inf. Technol., KTH R. Inst. of Technol., Stockholm, Sweden

Volume

26

Issue

10

fYear

2005

Firstpage

743

Lastpage

745

Abstract

This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain /spl beta/=64 and a breakdown voltage of 1100 V. The high /spl beta/ value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The BJTs show a clear emitter-size effect indicating that surface recombination has a significant influence on /spl beta/. A minimum distance of 2-3 μm between the emitter edge and base contact implant was found adequate to avoid a substantial /spl beta/ reduction.

Keywords

epitaxial growth; power bipolar transistors; surface structure; 1100 V; base-emitter junction; bipolar junction transistor; breakdown voltage; continuous epitaxial growth; emitter-size effect; epitaxial 4H-SiC BJT; geometrical effects; high current gain; Charge carrier lifetime; Current measurement; Doping; Epitaxial growth; Fabrication; Gain measurement; Implants; Insulated gate bipolar transistors; MOSFETs; Silicon carbide; 4H-SiC; bipolar junction transistor (BJT); breakdown voltage; current gain; emitter-size effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.856010

Filename

1510746