Title :
A technique to improve the drive current of high-voltage I/O transistors in digital CMOS technologies
Author :
Haifeng Xu ; O, K.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
By combining a 0.12-μm-long 1.2-V thin-oxide transistor with a 0.22-μm-long 3.3-V thick-oxide transistor in a 0.13-μm CMOS process, a composite MOS transistor structure with a drawn gate length of 0.34 μm is realized. Measurements show that at V/sub GS/=1.2 V and V/sub DS/=3.3 V, the composite transistor has more than two times the drain current of the minimum channel length (0.34 μm) 3.3-V thick-oxide transistor, while having the same breakdown voltage (V/sub BK/) as the thick-oxide transistor. Exploiting these, it should be possible to implement 3.3-V I/O transistors with better combination of drive current, threshold voltage (VT) and breakdown voltage in conventional CMOS technologies without adding any process modifications.
Keywords :
CMOS digital integrated circuits; MOSFET; power integrated circuits; transistors; 0.12 micron; 0.13 micron; 0.22 micron; 0.34 micron; 1.2 V; 3.3 V; CMOS process; MOSFET; VBK; breakdown voltage; composite MOS transistor; digital CMOS; drive current; high-voltage I-O transistor; level shifter; thin-oxide transistor; threshold voltage; CMOS logic circuits; CMOS process; CMOS technology; Current measurement; Length measurement; Logic circuits; MOSFETs; Switching circuits; Thickness measurement; Threshold voltage; Composite transistor; MOSFET; high drive current; high-voltage transistor; level shifter;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.855415
