DocumentCode
1169045
Title
Development and Implementation of a Readout Module for Radiation-Sensing Field-Effect Transistors
Author
Ruckman, L. ; Varner, G. ; Staniè, S. ; Koga, A. ; Tsuboyama, T.
Author_Institution
Dept. of Phys. & Astron., Hawaii Univ., Honolulu, HI
Volume
53
Issue
4
fYear
2006
Firstpage
2452
Lastpage
2455
Abstract
We describe a readout module for radiation-sensing field-effect transistors. Three of these modules are currently being used for measuring the total accumulated dose in the silicon vertex detector (SVD) of the Belle experiment at KEKB B-meson factory in the High energy accelerator research organization (KEK), Japan. These modules have been in operation since August 2005
Keywords
B mesons; MOSFET; nuclear electronics; position sensitive particle detectors; radiation monitoring; readout electronics; silicon radiation detectors; Belle experiment; KEKB B-meson factory; MOSFET; SVD; high energy accelerator research organization; radiation monitoring; radiation-sensing field-effect transistor; readout module; silicon vertex detector; Current measurement; FETs; MOSFET circuits; Production facilities; Radiation detectors; Radiation monitoring; Readout electronics; Silicon radiation detectors; Synchrotron radiation; Threshold voltage; B Factory; MOSFET; radiation monitoring;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2006.878272
Filename
1684126
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