Title :
Edge effects in narrow-width MOSFET´s
Author :
Deen, M. Jamal ; Zuo, Z.P.
Author_Institution :
Sch. of Eng., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
8/1/1991 12:00:00 AM
Abstract :
New results on edge effects in narrow-width MOSFETs as a function of the gate bias are presented. It was found that the value of the effective channel width, the current through the edge region, and the absolute value of the parasitic parallel conductance all increased with gate bias. These parameters were extracted from the experimental measurements by new techniques, which are described
Keywords :
insulated gate field effect transistors; semiconductor device models; edge effects; effective channel width; experimental measurements; gate bias; measurement techniques; narrow-width MOSFETs; parasitic parallel conductance; Councils; Current measurement; Data mining; Doping; Implants; MOS devices; MOSFET circuits; Substrates; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
