Title :
Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain
Author :
Guo, Xiangyi ; Beck, Ariane L. ; Campbell, Joe C. ; Emerson, David ; Sumakeris, Joe
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
We report spatial nonuniformity of responsivity of 4H-SiC avalanche photodiodes at high gain (M > 1000) that results from variation in the doping density. Two-dimensional raster scans show a steady decline laterally across the device. The direction in which the spatial response decreases is the same as that of increasing breakdown voltage on the wafer.
Keywords :
avalanche photodiodes; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 4H-SiC avalanche photodiodes; SiC; avalanche photodiodes; breakdown voltage; doping density; photodetector; responsivity; spatial nonuniformity; spatial response; two-dimensional raster scans; ultraviolet detection; Avalanche breakdown; Avalanche photodiodes; Dark current; Doping; Electric breakdown; Gain measurement; Light emitting diodes; Photoconductivity; Photodetectors; Testing; Avalanche photodiode (APD); photodetector; ultraviolet;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.854132
