• DocumentCode
    1170083
  • Title

    A low-power precomputation-based fully parallel content-addressable memory

  • Author

    Lin, Chi-Sheng ; Chang, Jui-Chuan ; Liu, Bin-Da

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    38
  • Issue
    4
  • fYear
    2003
  • fDate
    4/1/2003 12:00:00 AM
  • Firstpage
    654
  • Lastpage
    662
  • Abstract
    This paper presents a novel VLSI architecture for a fully parallel precomputation-based content-addressable memory (PB-CAM) with low-power, low-cost, and low-voltage features. This design is based on a precomputation approach that saves not only power consumption of the CAM system, but also reduces transistor count and operating voltage of the CAM cell. In addition, the proposed PB-CAM word structure adopts the static pseudo-nMOS circuit design to improve system performance. The whole design was fabricated with the TSMC 0.35-μm single-poly quadruple-metal CMOS process. With a 128 words by 30 bits CAM size, the measurement results indicate that the proposed circuit works up to 100 MHz with power consumption of 33 mW at 3.3-V supply voltage and works up to 30 MHz under 1.5-V supply voltage.
  • Keywords
    CMOS memory circuits; VLSI; content-addressable storage; low-power electronics; parallel memories; 0.35 micron; 1.5 V; 100 MHz; 3.3 V; 30 MHz; 33 mW; CMOS process; VLSI architecture; fully parallel precomputation-based content addressable memory; low-power low-voltage design; static pseudo-nMOS circuit; CADCAM; CMOS process; Circuit synthesis; Computer aided manufacturing; Energy consumption; Power measurement; Size measurement; System performance; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2003.809515
  • Filename
    1190601