DocumentCode
1170083
Title
A low-power precomputation-based fully parallel content-addressable memory
Author
Lin, Chi-Sheng ; Chang, Jui-Chuan ; Liu, Bin-Da
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
38
Issue
4
fYear
2003
fDate
4/1/2003 12:00:00 AM
Firstpage
654
Lastpage
662
Abstract
This paper presents a novel VLSI architecture for a fully parallel precomputation-based content-addressable memory (PB-CAM) with low-power, low-cost, and low-voltage features. This design is based on a precomputation approach that saves not only power consumption of the CAM system, but also reduces transistor count and operating voltage of the CAM cell. In addition, the proposed PB-CAM word structure adopts the static pseudo-nMOS circuit design to improve system performance. The whole design was fabricated with the TSMC 0.35-μm single-poly quadruple-metal CMOS process. With a 128 words by 30 bits CAM size, the measurement results indicate that the proposed circuit works up to 100 MHz with power consumption of 33 mW at 3.3-V supply voltage and works up to 30 MHz under 1.5-V supply voltage.
Keywords
CMOS memory circuits; VLSI; content-addressable storage; low-power electronics; parallel memories; 0.35 micron; 1.5 V; 100 MHz; 3.3 V; 30 MHz; 33 mW; CMOS process; VLSI architecture; fully parallel precomputation-based content addressable memory; low-power low-voltage design; static pseudo-nMOS circuit; CADCAM; CMOS process; Circuit synthesis; Computer aided manufacturing; Energy consumption; Power measurement; Size measurement; System performance; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2003.809515
Filename
1190601
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