Title :
Low-threshold 1.5 mu m DFB laser grown by GSMBE
Author :
Fernier, B. ; Artigue, C. ; Bonnevie, D. ; Goldstein, L. ; Perales, A. ; Benoit, J.
Author_Institution :
Lab. de Marcoussis, France
fDate :
6/8/1989 12:00:00 AM
Abstract :
GaInAsP 1.5 mu m DFB lasers with a low threshold current (17 mA) have been grown by gas source molecular beam epitaxy (GSMBE) in a two-step epitaxial process. The lasers exhibit single-mode emission for emitted power in excess of 10 mW with side mode suppression ratio of 40 dB and spectral linewidth of 15 MHz. In addition the dispersion of the lasing wavelength has been found to be as low as 1.7 nm.
Keywords :
distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.5 micron; DFB lasers; GSMBE; GaInAsP; emitted power; gas source molecular beam epitaxy; lasing wavelength; side mode suppression ratio; single-mode emission; spectral linewidth; threshold current; two-step epitaxial process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890519
