Injection transistor logic (ITL): new bipolar low-power inverter

Author

Arshinov, V.I. ; Vecshina, E.V.

Author_Institution

Inst. of Cybern. Problems, Acad. of Sci., Moscow, USSR

Volume

Issue

fYear

1989

fDate

7/6/1989 12:00:00 AM

Firstpage

898

Lastpage

899

Abstract

Investigates the characteristics of a new injection transistor logic (ITL) fabricated by vapour-phase epitaxy and ion implantation. The maximum current gain of the Si-ITL-inverter is about 150. The propagation delay t_pd was determined by the ring oscillator and maximum frequency method. At a power of 100 mu W per gate for this inverter, t_pd is about 500 ps and 850 ps for 60 mu W. In the high-speed ITL structure t_pd is about 300 ps for 120 mu W.

Keywords

bipolar integrated circuits; integrated circuit technology; integrated logic circuits; ion implantation; logic gates; vapour phase epitaxial growth; 60 to 120 muW; 850 to 300 ps; Si; VLSI; bipolar low-power inverter; characteristics; current gain; injection transistor logic; ion implantation; power dissipation; propagation delay; ring oscillator; vapour-phase epitaxy;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890602

Filename

31925

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1170901