Title :
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility
Author :
Law, Mark E. ; Solley, E. ; Liang, M. ; Burk, Dorothea E.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A self-consistent approach is proposed for extracting the minority-carrier mobility from fits to experimental data for lifetime and diffusion length and then comparing the extracted mobility to experimental mobility data. A value for electron and hole lifetime is extracted using a doping-dependent Shockley-Read-Hall mechanism with an Auger process. The hole lifetime is used to extract a minority carrier hole mobility that is consistent with the reported measurements of the hole diffusion length. The good agreement between extracted and experimental mobilities justifies incorporating the results into numerical device and circuit CAD tools.<>
Keywords :
carrier lifetime; carrier mobility; elemental semiconductors; minority carriers; semiconductor device models; silicon; Auger process; Si; diffusion length; doping-dependent Shockley-Read-Hall mechanism; hole lifetime; minority carrier hole mobility; minority-carrier lifetime; minority-carrier mobility; mobility; self consistent model; Charge carrier lifetime; Circuits; Data mining; Doping; Electrons; Frequency; Length measurement; Neodymium; Pollution measurement; Silicon;
Journal_Title :
Electron Device Letters, IEEE
