Title :
Low-κ BCB passivation on AlGaN-GaN HEMT fabrication
Author :
Wang, Wen-Kai ; Lin, Ching-Huao ; Lin, Po-Chen ; Lin, Cheng-Kuo ; Huang, Fan-Hsiu ; Chan, Yi-Jen ; Chen, Guan-Ting ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
Due to the stress-induced polarization effect on the GaN HEMTs, the surface passivation of the device is critical and is deserved to conduct a detailed study. It has been proven that the GaN HEMTs demonstrate nondispersive pulsed current-voltage (I-V) characteristics and better microwave power performances after passivating the Si3N4 film on the GaN surface. In this letter, we proposed to use the BCB material, a negative photoresist with a low-κ characteristic, as the surface passivation layer on GaN HEMTs fabrication. After comparing the dc I-V, pulsed I-V, RF small-signal, microwave power characteristics, and device reliability, this BCB-passivated GaN HEMT achieved better performance than the Si3N4 passivated device.
Keywords :
III-V semiconductors; high electron mobility transistors; passivation; photoresistors; reliability; AlGaN-GaN; AlGaN-GaN HEMT fabrication; BCB material; BCB-passivated GaN HEMT; DC I-V; GaN surface; RE small-signal; Si3N4; Si3N4 film; Si3N4 passivated device; benzocyclobutene; device reliability; device surface passivation; high electron mobility transistors; low-κ BCB passivation; microwave power characteristics; microwave power performance; negative photoresist; nondispersive pulsed current-voltage characteristics; pulsed I-V; stress-induced polarization effect; surface passivation layer; Aluminum gallium nitride; Fabrication; Gallium nitride; HEMTs; Microwave devices; Passivation; Polarization; Radio frequency; Resists; Semiconductor films; 65; BCB; Benzocyclobutene; GaN HEMT; passivation; reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.838322
