DocumentCode :
1172019
Title :
Multidimensional augmented current equation including velocity overshoot
Author :
Kan, Edwin C. ; Ravaioli, Umberto ; Chen, Datong
Author_Institution :
Beckman Inst. & Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume :
12
Issue :
8
fYear :
1991
Firstpage :
419
Lastpage :
421
Abstract :
The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed.<>
Keywords :
field effect transistors; semiconductor device models; carrier heating; carrier temperature; distribution relaxation effects; energy balance equation; equivalent mobility; generalized model; multidimensional augmented drift diffusion current equation; numerical implementation; perturbation analysis; velocity overshoot; velocity overshoot correction; Current density; Electron mobility; Equations; Gold; Heating; Laboratories; Multidimensional systems; Nonuniform electric fields; Steady-state; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.119151
Filename :
119151
Link To Document :
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