DocumentCode
1172019
Title
Multidimensional augmented current equation including velocity overshoot
Author
Kan, Edwin C. ; Ravaioli, Umberto ; Chen, Datong
Author_Institution
Beckman Inst. & Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume
12
Issue
8
fYear
1991
Firstpage
419
Lastpage
421
Abstract
The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed.<>
Keywords
field effect transistors; semiconductor device models; carrier heating; carrier temperature; distribution relaxation effects; energy balance equation; equivalent mobility; generalized model; multidimensional augmented drift diffusion current equation; numerical implementation; perturbation analysis; velocity overshoot; velocity overshoot correction; Current density; Electron mobility; Equations; Gold; Heating; Laboratories; Multidimensional systems; Nonuniform electric fields; Steady-state; Temperature distribution;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.119151
Filename
119151
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