• DocumentCode
    1172019
  • Title

    Multidimensional augmented current equation including velocity overshoot

  • Author

    Kan, Edwin C. ; Ravaioli, Umberto ; Chen, Datong

  • Author_Institution
    Beckman Inst. & Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    12
  • Issue
    8
  • fYear
    1991
  • Firstpage
    419
  • Lastpage
    421
  • Abstract
    The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed.<>
  • Keywords
    field effect transistors; semiconductor device models; carrier heating; carrier temperature; distribution relaxation effects; energy balance equation; equivalent mobility; generalized model; multidimensional augmented drift diffusion current equation; numerical implementation; perturbation analysis; velocity overshoot; velocity overshoot correction; Current density; Electron mobility; Equations; Gold; Heating; Laboratories; Multidimensional systems; Nonuniform electric fields; Steady-state; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.119151
  • Filename
    119151