Title :
800 V 4H-SiC RESURF-type lateral JFETs
Author :
Fujikawa, K. ; Shibata, K. ; Masuda, T. ; Shikata, S. ; Hayashi, H.
Author_Institution :
Device Technol. Center, Sumitomo Electr. Ind. Ltd., Osaka, Japan
Abstract :
This letter proposes to show that a lateral switching device has some unique advantages, including little dependence on substrate defects, low on-resistance, and a simple design of heat radiation. A reduced surface field (RESURF) type SiC-JFET is one of candidate devices for an electric or hybrid automobile application. Small RESURF-type SiC-JFETs with gate width of 200 μm and a blocking voltage of 800 V were fabricated. The fabrication and characteristics of the devices are described and discussed.
Keywords :
automobiles; automotive electronics; heat radiation; junction gate field effect transistors; substrates; wide band gap semiconductors; 200 micron; 800 V; RESURF-type JFET; SiC; blocking voltage; electric automobile application; heat radiation; hybrid automobile application; junction gate field effect transistors; lateral JFET; lateral switching device; reduced surface field; substrate defects; Annealing; Argon; Automobiles; Fabrication; Ion implantation; JFETs; Silicon carbide; Silicon compounds; Substrates; Voltage; JFETs; reduced surface field (RESURF); silicon carbide (SiC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.838058
