Title :
A fully integrated 24-GHz eight-element phased-array receiver in silicon
Author :
Guan, Xiang ; Hashemi, Hossein ; Hajimiri, Ali
Author_Institution :
Moore Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal combining is performed at an IF of 4.8 GHz. The phase-shifting with 4 bits of resolution is realized at the LO port of the first down-conversion mixer. A ring LC voltage-controlled oscillator (VCO) generates 16 different phases of the LO. An integrated 19.2-GHz frequency synthesizer locks the VCO frequency to a 75-MHz external reference. Each signal path achieves a gain of 43 dB, a noise figure of 7.4 dB, and an IIP3 of -11 dBm. The eight-path array achieves an array gain of 61 dB and a peak-to- ratio of 20 dB and improves the signal-to-noise ratio at the output by 9 dB.
Keywords :
BiCMOS integrated circuits; antenna phased arrays; frequency synthesizers; mixers (circuits); oscillators; phase shifters; 19.2 GHz; 24 GHz; 4.8 GHz; 43 dB; 61 dB; 7.4 dB; 75 MHz; LO port; SiGe; SiGe BiCMOS; down-conversion mixer; frequency synthesizer; heterodyne topology; omnidirectional communication; phase shifting; phased-array receiver; ring LC voltage-controlled oscillator; silicon integration; BiCMOS integrated circuits; Frequency synthesizers; Gain; Germanium silicon alloys; Noise figure; Signal resolution; Signal to noise ratio; Silicon germanium; Topology; Voltage-controlled oscillators; 65; BiCMOS integrated circuits; low-noise amplifiers; phase shifting; phased arrays; receivers; wireless communications;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.836339