Title :
132-Gb/s 4:1 multiplexer in 0.13-μm SiGe-bipolar technology
Author :
Meghelli, Mounir
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A -3.3-V half-rate clock 4:1 multiplexer implemented in a 210-GHz fT 0.13-μm SiGe-bipolar technology and operating up to 132 Gb/s is reported. Among many design challenges, the control of on-chop clock distribution was critical to achieve such a high data rate. At 100 Gb/s, the chip operates reliably down to -3.0-V supply voltage and up to 100°C chip temperature. The circuit consumes 1.45 W from a -3.3-V supply voltage and exhibits less than 340-fs RMS jitter on the output data.
Keywords :
Ge-Si alloys; bipolar integrated circuits; bipolar transistors; jitter; multiplexing equipment; -3 V; -3.3 V; 0.13 micron; 100 C; 210 GHz; 4:1 multiplexer; RMS jitter; SiGe; SiGe-bipolar technology; chip temperature; on-chop clock distribution; Clocks; Delay; Energy consumption; Germanium silicon alloys; Integrated circuit technology; Jitter; Latches; Multiplexing; Silicon germanium; Voltage; 4:1 multiplexer; 65; SiGe bipolar technology; multiplexer;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.835641
