Title :
Determination of the Si-SiO/sub 2/ barrier height from the Fowler-Nordheim plot
Author :
Olivo, P. ; Suñé, J. ; Riccò, Bruno
Author_Institution :
DEIS, Bologna Univ., Italy
Abstract :
It is shown that, even considering a field-dependent Si-SiO/sub 2/ barrier height for electron tunneling as predicted by the quantum-mechanical (QM) modeling of Si-SiO/sub 2/ interfaces, the Fowler-Nordheim (F-N) plot is linear. It is proved that the equivalent barrier height extracted from the graph slope is not representative of the actual field-dependent barrier. The problem of correctly estimating the oxide field to be used in F-N plots is also addressed.<>
Keywords :
elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; Fowler-Nordheim plot; Si-SiO/sub 2/ interfaces; electron tunneling; equivalent barrier height; field-dependent Si-SiO/sub 2/ barrier height; field-dependent barrier; oxide field estimation; quantum mechanical modelling; Current measurement; Electrons; Helium; MOS capacitors; Predictive models; Silicon; Substrates; Thickness measurement; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
