DocumentCode :
1174057
Title :
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
Author :
Xia, Guangrui ; Nayfeh, Hasan M. ; Lee, Minjoo L. ; Fitzgerald, Eugene A. ; Antoniadis, Dimitri A. ; Anjum, Dalaver H. ; Li, Jian ; Hull, Robert ; Klymko, Nancy ; HOyt, Judy L.
Author_Institution :
Microsystems Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
51
Issue :
12
fYear :
2004
Firstpage :
2136
Lastpage :
2144
Abstract :
The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) has been investigated. Long-channel strained-Si and bulk n-MOSFETs were fabricated with various channel-region implant doses and thermal budgets. Neutral Si and Ge species were used to study the impact of the implant damage on mobility separately from ionized impurity scattering effects. Electron mobility enhancement is shown to degrade considerably when the implant dose is above a critical dose for a given thermal budget. Transmission electron microscopy, secondary ion mass spectrometry and Raman spectroscopy were used to investigate the mobility degradation mechanisms. Residual implant damage and implant damage enhanced Ge up-diffusion into the Si are shown to be responsible for the mobility degradation. Two-dimensional damage simulations of 30-nm scale MOSFETs are used to examine potential technological implications of these findings.
Keywords :
MOSFET; Raman spectroscopy; electron mobility; elemental semiconductors; germanium; ion implantation; rapid thermal annealing; secondary ion mass spectroscopy; silicon; transmission electron microscopy; 30 nm; Ge; Raman spectroscopy; Si; bulk n-MOSFET; channel-region implant doses; electron mobility enhancement; ion implantation damage; ionized impurity scattering effects; long-channel strained-Si n-MOSFET; metal-oxide-semiconductor field-effect transistors; mobility degradation; rapid thermal anneal; rapid thermal annealing; residual implant damage; secondary ion mass spectrometry; strained-Si N-channel MOSFET; thermal budget; transmission electron microscopy; Electron mobility; FETs; Implants; Ion implantation; MOSFET circuits; Raman scattering; Rapid thermal annealing; Rapid thermal processing; Thermal degradation; Thermal factors; 211;oxide&#; 211;semiconductor field-effect transistors; 65; Electron mobility; Ge diffusion; ion implantation damage; n-MOSFETs; rapid thermal anneal; strained-Si n-channel metal&#;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2004.839116
Filename :
1362979
Link To Document :
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