Title :
Temperature dependence of attenuation of coplanar waveguide on semi-insulating 4H-SiC through 540°C
Author :
Ponchak, G.E. ; Schwartz, Z.D. ; Alterovitz, S.A. ; Downey, A.N. ; Freeman, J.C.
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
fDate :
3/20/2003 12:00:00 AM
Abstract :
For the first time, the temperature and frequency dependence of the attenuation of a coplanar waveguide on semi-insulating 4H-SiC substrate is reported. At 500°C, the attenuation increases by 2 dB/ cm at 1 GHz and by 3.25 dB/cm at 50 GHz. This appears to be mainly due to a decrease in the SiC resistivity as the temperature increases.
Keywords :
coplanar waveguides; electrical resistivity; silicon compounds; wide band gap semiconductors; 1 to 50 GHz; 540 degC; SiC; attenuation; coplanar waveguide; electrical resistivity; frequency dependence; semi-insulating 4H-SiC substrate; temperature dependence; wide band gap semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030356
