Title :
180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs–AlInAs APDs
Author :
Rouvié, Anne ; Carpentier, Danièle ; Décobert, Jean ; Lagay, Nadine ; Pommereau, Frédéric ; Achouche, Mohand
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
fDate :
6/1/2009 12:00:00 AM
Abstract :
This letter presents a comparative study of GaInAs-AlInAs avalanche photodiodes with different absorption layer thicknesses. Simulations concerning dark current and frequency response have been carried out to study the influence of the vertical structure on functional characteristics. Fabricated devices achieved gain-bandwidth product GtimesB as high as 180 GHz combined with very low dark current and low excess noise factor.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; GaInAs-AlInAs; absorption layer; avalanche photodiodes; back-side illumination; dark current; excess noise factor; frequency 180 GHz; frequency response; gain-bandwidth product; AlInAs; GaInAs; avalanche photodiode (APD); dark current; gain-bandwidth product; simulation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2015959
