DC and transmission line models for a high electron mobility transistor

Author

Huang, Di-Hui ; Lin, Hung C.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

37

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1361

Lastpage

1370

Abstract

Two improved DC models are developed to describe the output I -V (current-voltage) characteristics and small-signal parameters of a GaAs high-electron-mobility transistor (HEMT). A simple analytical, nonlinear, charge-control model for a two-dimensional electron gas is introduced and included in one of the DC models. The HEMT is modeled as a transmission line for the microwave-frequency AC analysis, and its microwave performance is predicted by the parameters obtained from fitting DC characteristics. Both DC and AC model predictions show a good agreement with experimental results for a 0.3-μm GaAs HEMT

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; semiconductor device models; solid-state microwave devices; DC models; GaAs; HEMT; III-V semiconductor; high electron mobility transistor; microwave performance; microwave-frequency AC analysis; nonlinear charge-control model; output I/V characteristics; small-signal parameters; transmission line models; two-dimensional electron gas; Analytical models; Circuits; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Microwave frequencies; Performance analysis; Predictive models; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.32219

Filename

32219