DocumentCode
11762
Title
A Frequency-Agile RF Frontend Architecture for Multi-Band TDD Applications
Author
Goswami, Suparna ; Kim, Heonhwan ; Dawson, Joel L.
Author_Institution
Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
Volume
49
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
2127
Lastpage
2140
Abstract
Emerging wireless standards specify dozens of bands spanning several octaves, which need to be supported in form-factor and energy constrained mobile devices targeting ubiquitous connectivity. However, in current multi-band radio implementations, significant redundancy is still the norm in the RF frontend. This work introduces an improved architecture for multi-band, time-division duplexed (TDD) radios, which replaces multiple narrowband frontend components with a frequency-agile solution, tunable over a wide frequency range. A highly digital architecture is adopted, leading to a fully integrated solution wherein both efficiency and achievable frequency range benefit from CMOS scaling. A prototype is integrated in 45 nm SOI CMOS. Peak PA output power is 27.7 ±0.5 dBm from 1.3 to 3.3 GHz, with up to 30% total efficiency at 2 V. For TDD LTE applications, better than -30 dBc ACLR and -30 dB EVM is measured with 64 QAM, 20 MHz signals from 1.44 to 3.41 GHz, with up to 17.2% average efficiency and 23.4 dBm average power. The LNA achieves AV ≥ 14 dB, NF = 4.4 ±1.6 dB and IIP 3 ≥ -7 dBm from 1.3 to 3.3 GHz while drawing just 6 mA from 1 V. The demonstrated frequency range covers a total of 11 TDD bands .
Keywords
CMOS integrated circuits; Long Term Evolution; mobile handsets; quadrature amplitude modulation; time division multiplexing; 64 QAM; ACLR; CMOS scaling; EVM; SOI CMOS; TDD LTE; TDD bands; current 6 mA; digital architecture; energy constrained mobile devices; form-factor mobile devices; frequency 1.3 GHz to 3.3 GHz; frequency 1.44 GHz to 3.41 GHz; frequency-agile RF frontend architecture; frequency-agile solution; multiband TDD; multiband radio implementations; multiband time-division duplexed radios; narrowband frontend components; size 45 nm; ubiquitous connectivity; voltage 11 V; wireless standards; CMOS integrated circuits; Computer architecture; Impedance; Microprocessors; Power generation; Radio frequency; Switches; 4G wireless communication; low-noise amplifiers; power amplifiers; silicon on insulator technology; software radio; time division multiplexing; wireless LAN;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2014.2339318
Filename
6871369
Link To Document