AlGaN/ GaN nanoscale HEMT with Arc shaped gate and stacked HfO2-SiO2 gate dielectric

Author

Das, Biswajit ; Bhowmick, Bhaskar

Author_Institution

Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol. Silchar, Silchar, India

fYear

2014

fDate

6-8 March 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents for the first time Arc shaped gate and arc shaped stacked gate dielectric with cap layer Nanoscale AlGaN/GaN High Electron Mobility Transistor for realization of normally-off HEMT with reduced gate leakage current. An excellent high drain current of 1.182×10^-3 A/um at 0.881 threshold voltage along with satisfactory I_ON/I_OFF current ratio of 8.62×10⁷ is obtained.

Keywords

III-V semiconductors; aluminium compounds; dielectric materials; gallium compounds; hafnium compounds; high electron mobility transistors; leakage currents; silicon compounds; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN nanoscale HEMT; HfO₂-SiO₂; arc shaped stacked gate dielectric; cap layer; high electron mobility transistor; normally-off HEMT; reduced gate leakage current; Aluminum gallium nitride; Dielectrics; Gallium nitride; HEMTs; Hafnium compounds; Logic gates; Threshold voltage; Absolute Electric Field; AlGaN/GaN HEMT; Arc gate; Drain Current; HfO2; Surface Potential; Threshold Voltage; cap layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Green Computing Communication and Electrical Engineering (ICGCCEE), 2014 International Conference on

Conference_Location

Coimbatore

Type

conf

DOI

10.1109/ICGCCEE.2014.6922273

Filename

6922273