DocumentCode
1179709
Title
Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
Author
Zhang, M. ; Knoch, J. ; Zhao, Q.T. ; Fox, A. ; Lenk, St. ; Mantl, S.
Author_Institution
Inst. for Thin Films & Interfaces, Julich, Germany
Volume
41
Issue
19
fYear
2005
fDate
9/15/2005 12:00:00 AM
Firstpage
1085
Lastpage
1086
Abstract
Temperature dependent experimental results of Schottky-barrier MOSFETs with dopant segregation using fully nickel silicided source and drain contacts are presented. The dependence of the extracted effective Schottky-barrier height (SBH) on the gate voltage clearly shows that use of dopant segregation lowers the effective SBH for electron injection significantly from 0.64 eV down to ∼0.1 eV.
Keywords
MOSFET; Schottky barriers; charge injection; cryogenic electronics; semiconductor doping; silicon-on-insulator; NiSi; SOI-MOSFET; Schottky barrier height; dopant segregation; electron injection; fully nickel silicided drain contacts; fully nickel silicided source contacts; gate voltage; low temperature measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20052665
Filename
1512772
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