Title :
Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT´s with 0.35 μm gates
Author :
Suehiro, Haruyoshi ; Miyata, Tadayuki ; Kuroda, Shigeru ; Hara, Naoki ; Takikawa, Masahiko
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
10/1/1994 12:00:00 AM
Abstract :
We fabricated 0.35-μm gate-length pseudomorphic HEMT DCFL circuits using a highly doped thin InGaP layer as the electron supply layer. The InGaP/InGaAs/GaAs pseudomorphic HEMT grown by MOVPE is suitable for short gate-length devices with a low supply voltage since it does not show short channel effects even for gate length down to 0.35 μm. We obtained a K value of 555 mS/Vmm and a transconductance gm of 380 mS/mm for an InGaP layer 18.5 nm thick. Fabricated 51-stage ring oscillators show the basic propagation delay of 11 ps and the power-delay product of 7.3 fJ at supply voltage of VDD of 1 V, and 13.8 ps and 3.2 fJ at VDD of 0.6 V for gates 10 μm wide
Keywords :
III-V semiconductors; direct coupled FET logic; field effect integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated circuit technology; integrated logic circuits; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 0.35 micron; 0.6 V; 1 V; 11 ps; 13.8 ps; HEMT DCFL circuits; InGaP-InGaAs-GaAs; InGaP/InGaAs/GaAs; K value; MOVPE; electron supply layer; power-delay product; propagation delay; pseudomorphic HEMTs; ring oscillators; short gate-length devices; transconductance; Circuits; Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; HEMTs; Indium gallium arsenide; Low voltage; PHEMTs; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
