A 5-10 GHz, 1-Watt HBT amplifier with 58% peak power-added efficiency

Author

Salib, Mike ; Ali, Fazal ; Gupta, Aditya ; Bayraktaroglu, Burhan ; Dawson, Dale

Author_Institution

Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD, USA

Volume

4

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

320

Lastpage

322

Abstract

Four 0.25-W GaAs Heterojunction Bipolar Transistors (HBT´s) were combined in a single-stage hybrid microstrip amplifier. An output power of minimum 1 Watt (W) was achieved over the 5.5-9.5 GHz band with >48% power-added efficiency (PAE). The peak PAE was 58% at 7 and 9.5 GHz with an average efficiency of 52% over the 5-10 GHz band. This result was reproduced on two more units with a minimum efficiency of 48% and an average efficiency of 51%. To our knowledge, this is the highest efficiency obtained from any 1-W amplifier covering 5-10 GHz bandwidth

Keywords

III-V semiconductors; bipolar transistor circuits; gallium arsenide; heterojunction bipolar transistors; microstrip components; microwave amplifiers; solid-state microwave circuits; 1 W; 5 to 10 GHz; 58 percent; GaAs; GaAs Heterojunction Bipolar Transistors; HBT amplifier; peak power-added efficiency; single-stage hybrid microstrip amplifier; Bonding; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Microstrip; Performance gain; Power amplifiers; Power generation; Radio frequency; Substrates;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.324703

Filename

324703