Title :
Fabrication and Characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
Author :
Chang, Ya-Hsien ; Kuo, H.C. ; Lai, Fang-I ; Chang, Yi-An ; Lu, C.Y. ; Laih, L.H. ; Wang, S.C.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
Abstract :
This paper presents the fabrication and characteristics of high-performance 850-nm InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW´s composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents ∼0.4 mA and slope efficiencies ∼0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than ∼30% when the substrate temperature is raised from room temperature to 85°C. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA)12/ are demonstrated. The authors have accumulated life test data up to 1000 h at 70°C/8 mA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; optical modulation; photoluminescence; quantum well lasers; semiconductor growth; surface emitting lasers; 14.5 GHz; 20 to 85 degC; 70 h; InGaAsP-InGaP; InGaAsP-InGaP multiple quantum wells; MQW growth condition; VCSEL fabrication; high-speed VCSEL; optical modulation; oxide-confined VCSEL; photoluminescence; room temperature; strain compensated MQW; vertical-cavity surface-emitting lasers; Bandwidth; Laser theory; Life testing; Optical device fabrication; Photoluminescence; Quantum well devices; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; High-speed electronics; InGaAsP–InGaP; strain-compensated; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2004.834835
