Investigation of temporary bonding and release processes for TSV with copper pillar bumps

Author

Xiangmeng Jing ; Feng Jiang ; Cheng Xu ; Kai Xue ; Fengwei Dai ; Zhaoqiang Li ; Wenqi Zhang

Author_Institution

Nat. Center for Adv. Packaging, Wuxi, China

fYear

2014

fDate

12-15 Aug. 2014

Firstpage

86

Lastpage

89

Abstract

Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above mentioned aspects, TSV wafers with 30 μm copper pillar bumps can be successfully released using the thermal-sliding debonding mechanism.

Keywords

bonding processes; copper; three-dimensional integrated circuits; 2.5D IC integration; 3D IC integration; TSV wafers; bumping process; copper pillar bumps; release process; size 30 mum; thermal-sliding debonding mechanism; topography structure; wafer debonding; wafer temporary bonding; wafer thinning; Bonding; Copper; Glass; Silicon; Three-dimensional displays; Through-silicon vias; 3D integration; TSV; copper pillar bump; debonding; style; temporary bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2014 15th International Conference on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/ICEPT.2014.6922602

Filename

6922602