DocumentCode :
1182988
Title :
N2-incorporation-induced blue shift in InGaAsN/GaAs quantum well during annealing
Author :
Peng, C.S. ; Liu, H.F. ; Konttinenn, J. ; Pessa, M.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Volume :
151
Issue :
5
fYear :
2004
Firstpage :
320
Lastpage :
322
Abstract :
Three different kinds of quantum wells (QWs) were grown at the same growth temperature by molecular beam epitaxy (MBE): InGaAs/GaAs QW without any N2 background; InGaAs(N2)/GaAs double QWs with N2 flow to the sample but without plasma; and InGaAsN/GaAs QW with N-plasma. The latter two types of QW were grown on one sample. Post-growth rapid thermal annealing (RTA) was applied to them at 700°C. After 31.5 min of RTA, it was observed that the photoluminescence blue shift of the InGaAs(N2) QW was 40 meV, which was 9 meV more than that for the InGaAsN QW, and the InGaAs QW had only about 13 meV blue shift. However, for the as-grown case, the PL peak position of the InGaAs QW and InGaAs(N2) QWs were the same (1148 nm), and for the InGaAsN QW it was 220 nm longer. This indicates that there is N2 incorporation during InGaAsN growth, the N2 incorporation does not affect the band structure and the N2 incorporation dominates the blue shift during RTA.
Keywords :
III-V semiconductors; arsenic compounds; band structure; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma deposition; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; spectral line shift; 1148 nm; 31.5 min; 700 degC; InGaAsN-GaAs; InGaAsN/GaAs quantum well; N-plasma; N2 flow; N2-incorporation; annealing; band structure; blue shift; molecular beam epitaxy; photoluminescence; post-growth rapid thermal annealing;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:20040883
Filename :
1367378
Link To Document :
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