Study on strain in InGaN-based multijunction solar cell

Author

Rahman, Md Arifur ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol. (KUET), Khulna, Bangladesh

fYear

2014

fDate

13-15 Feb. 2014

Firstpage

1

Lastpage

4

Abstract

In case of MJSC residual strain is induced due to the change in lattice constants in different layers. So far our knowledge efficiency of multijunction solar cell (MJSC) has not been studied considering the strain effect on the energy bandgap of subcells. In this paper, we have analytically studied residual strain in different MJSC structures using multilayered strain model. Three structures are investigated to realize the structure-dependent state of strain in MJSC. The results obtained from the present study demonstrate that the strain induced in MJSC depends not only on the numbers of subcells but also on the position of subcells, window, tunnel, and BSF layers as well as their thicknesses. The influence of strain found more in the structure indicated by MJSC-3 compared to the structures MJSC-2, and MJSC-1.

Keywords

III-V semiconductors; gallium compounds; indium compounds; lattice constants; solar cells; wide band gap semiconductors; InGaN; energy bandgap; lattice constants; multijunction solar cell; multilayered strain model; residual strain; strain effect; Junctions; Lattices; Photonic band gap; Photovoltaic cells; Strain; Substrates; Back Surface Field (BSF); Multi-Junction Solar Cell (MJSC); Strain; Tunnel junction; Window layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Information and Communication Technology (EICT), 2013 International Conference on

Conference_Location

Khulna

Print_ISBN

978-1-4799-2297-0

Type

conf

DOI

10.1109/EICT.2014.6777843

Filename

6777843