DocumentCode :
1185795
Title :
Cross comparison of thin-film tensile-testing methods examined using single-crystal silicon, polysilicon, nickel, and titanium films
Author :
Tsuchiya, Toshiyuki ; Hirata, Masakazu ; Chiba, Norio ; Udo, Ryujiro ; Yoshitomi, Yuji ; Ando, Taeko ; Sato, Kazuo ; Takashima, Kazuki ; Higo, Yakichi ; Saotome, Yasunori ; Ogawa, Hirofumi ; Ozaki, Koichi
Author_Institution :
Kyoto Univ., Japan
Volume :
14
Issue :
5
fYear :
2005
Firstpage :
1178
Lastpage :
1186
Abstract :
This paper reports on the results of comparing different types of tensile testing methods that are used to evaluate thin-film properties. We tested the same material fabricated on a single wafer using different testing techniques at five different research institutions. The testing methods were different in the way the specimen was gripped. Materials tested were single-crystal silicon (SCS), polysilicon, nickel, and titanium films. Specimens with three different shapes were processed through the same fabrication steps. The tensile strength, fracture strain, and Young´s modulus of the films were measured and compared. The measured values of the mechanical properties of all the testing methods were in good agreement with each other, thus demonstrating their accuracy.
Keywords :
Young´s modulus; nickel; silicon; tensile testing; thin films; titanium; Ni; Si; Ti; Young modulus; fracture strain; mechanical properties; polysilicon; single-crystal silicon; standardization; tensile strength; tensile testing; thin-film tensile-testing methods; Fabrication; Materials testing; Nickel; Semiconductor films; Semiconductor thin films; Shape; Silicon; Strain measurement; Titanium; Transistors; Mechanical properties; standardization; tensile testing; thin film;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2005.851820
Filename :
1516199
Link To Document :
بازگشت