Title :
External Compensation of Nonuniform Electrical Characteristics of Thin-Film Transistors and Degradation of OLED Devices in AMOLED Displays
Author :
In, Hai-Jung ; Kwon, Oh-Kyong
Author_Institution :
Dept. of Electron. Comput. Eng., Hanyang Univ., Seoul
fDate :
4/1/2009 12:00:00 AM
Abstract :
The variation of electrical characteristics of polycrystalline-silicon thin-film transistor (TFT) and degradation of organic light-emitting-diode (OLED) device cause nonuniform intensity of luminance and image sticking in active-matrix OLED (AMOLED) displays. An external compensation method that senses and compensates variations of threshold voltage and mobility of TFTs and degradation of OLED device is proposed. The effect of the external compensation method on AMOLED pixel is experimentally verified by measuring the luminance of OLEDs and the electrical characteristics of TFTs in AMOLED pixels.
Keywords :
LED displays; brightness; compensation; elemental semiconductors; organic light emitting diodes; semiconductor thin films; silicon; thin film transistors; Si; active-matrix OLED displays; external compensation method; image sticking; luminance intensity; organic light-emitting-diode device; polycrystalline-silicon thin-film transistor; threshold voltage; Degradation; external compensation; organic light-emitting diode (OLED); polycrystalline-silicon thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2014885
