Title :
On the body-source built-in potential lowering of SOI MOSFETs
Author :
Su, Pin ; Fung, Samuel K H ; Wyatt, Peter W. ; Wan, Hui ; Niknejad, Ali M. ; Chan, Mansun ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
This letter provides a viewpoint for the characterization of state-of-the-art thin film silicon-on-insulator (SOI) MOSFETs. Based on body-source built-in potential lowering, the degree of full depletion can be quantified. In addition to serving as a measure of the floating-body behavior of SOI devices, the concept also enables the consolidation of partial-depletion (PD) and full-depletion (FD) SOI compact models. This consolidation of compact models together with the trend of coexistence of PD/FD devices in a single chip has become one of the greatest challenges in the scaling of SOI CMOS.
Keywords :
MOSFET; impact ionisation; semiconductor device models; silicon-on-insulator; SOI MOSFETs; Si; body-source built-in potential lowering; floating-body behavior; full depletion degree; full-depletion SOI compact models; impact ionization; partial-depletion SOI compact models; scaling; CMOS technology; Doping; Impact ionization; Low voltage; MOSFETs; Semiconductor device manufacture; Semiconductor device measurement; Semiconductor device modeling; Semiconductor thin films; Silicon on insulator technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.807696
