DocumentCode
1187362
Title
Impurity profile effects of buffer layer on PT-IGBT characteristics
Author
Kim, Chung-Hee ; Chung, Sang-Koo
Author_Institution
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
Volume
50
Issue
2
fYear
2003
Firstpage
513
Lastpage
516
Abstract
The effects of Gaussian impurity profiles in the p+ anode/n-buffer layer of PT-IGBTs on device characteristics are studied numerically and analytically. The results are compared with those from the uniform impurity profiles. A better tradeoff between the forward voltage drop and the turn-off time is found in the Gaussian impurity profile.
Keywords
carrier density; current density; doping profiles; impurity distribution; insulated gate bipolar transistors; power transistors; semiconductor device models; Gaussian impurity profiles; PT-IGBT characteristics; forward voltage drop; impurity profile effects; n-buffer layer; p+ anode; punch-through IGBT; turn-off time; Buffer layers; Dielectrics; Electrons; Germanium silicon alloys; Impurities; Nanocrystals; Quantum dots; Silicon germanium; Tunneling; Zirconium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.809036
Filename
1196100
Link To Document