Title :
Total dose effects on bipolar integrated circuits: characterization of the saturation region
Author :
Boch, J. ; Saigné, F. ; Ducret, S. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Iacconi, P. ; Dusseau, L.
Author_Institution :
Univ. de Nice Sophia-Antipolis, France
Abstract :
The total-dose response of bipolar microcircuits is investigated. A recovery of the degradation is observed for high total dose in the saturation region. The circuit response in this region is studied based on room temperature annealing. The role of the electric field is studied and the results are discussed in terms of hardness assurance.
Keywords :
annealing; bipolar integrated circuits; dosimetry; radiation hardening (electronics); semiconductor device measurement; 293 to 298 K; bipolar integrated circuits; bipolar microcircuits; bipolar transistor; device characterization; electric field; hardness assurance; linear microcircuit; room temperature annealing; saturation region; total dose effects; Annealing; Bipolar integrated circuits; Degradation; Ionizing radiation; Performance evaluation; Semiconductor device testing; Shape; Space missions; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839143
