DocumentCode :
1188969
Title :
Transient conductive path induced by a Single ion in 10 nm SiO2 Layers
Author :
Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Candelori, A.
Author_Institution :
Dept. of Inf. Eng., Padova Univ., Italy
Volume :
51
Issue :
6
fYear :
2004
Firstpage :
3304
Lastpage :
3311
Abstract :
Large charge loss can happen in isolated conductive lines when hit by a single high linear energy transfer (LET) ion. We have demonstrated this phenomenon by using floating gate (FG) memory arrays, which allowed us to study it on the basis of a large statistical set of data. Charge loss is by far larger than that expected from a simple generation-recombination model. FG´s hit by ions experience a charge loss linearly dependent on ion LET and on the electric field. We are proposing a semi-empirical model based on the idea that a conductive path assimilable to a resistance connects the FG to the substrate during the time (10-14 s) needed for electrons to escape the tunnel oxide. The model is fully consistent with a broad range of theoretical and experimental results, and has excellent fitting capabilities.
Keywords :
electric fields; ion beam effects; logic gates; memory architecture; silicon compounds; transient analysis; 10 nm; SiO2; SiO2 layers; electric field; electrons; floating gate memory arrays; isolated conductive lines; large charge loss; semiempirical model; simple generation-recombination model; single high linear energy transfer ion; transient conductive path; tunnel oxide; CMOS technology; Charge carrier processes; Energy exchange; Insulation life; Nonvolatile memory; Nuclear power generation; Radiative recombination; Silicon; Space charge; Spontaneous emission;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.839146
Filename :
1369486
Link To Document :
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