Title :
Single event transients characterization in SOI CMOS comparators
Author :
Zhao, Bing ; Leuciuc, Adrian
Author_Institution :
Dept. of Electr. & Comput. Eng., Stony Brook Univ., NY, USA
Abstract :
A theoretical analysis of single event induced transients in SOI CMOS comparators is presented, confirmed by transistor-level simulations. The proposed approach can predict the probability of single event upset (SEU) at the output of the comparator. A design methodology to achieve an imposed radiation hardness is proposed.
Keywords :
CMOS analogue integrated circuits; CMOS digital integrated circuits; comparators (circuits); integrated circuit design; radiation hardening (electronics); silicon-on-insulator; transients; SEU; SOI CMOS comparators; probability; radiation hardness; single event transients characterization; single event upset; transistor-level simulations; Analog circuits; CMOS technology; Capacitance; Circuit simulation; Circuit synthesis; Digital circuits; Latches; Single event upset; Space technology; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.839508
