• DocumentCode
    1189263
  • Title

    Heavy ion-induced digital single-event transients in deep submicron Processes

  • Author

    Benedetto, J. ; Eaton, P. ; Avery, K. ; Mavis, D. ; Gadlage, M. ; Turflinger, T. ; Dodd, Paul E. ; Vizkelethyd, G.

  • Author_Institution
    Mission Res. Corp., Colorado Springs, CO, USA
  • Volume
    51
  • Issue
    6
  • fYear
    2004
  • Firstpage
    3480
  • Lastpage
    3485
  • Abstract
    Single-event transients (SETs) in digital circuits/processes are examined. SETs appear to substantially mitigate traditional SEU static-latch hardening techniques below 0.25 μm. The resulting IC error rate for advanced technology node hardened-electronics is dominated by the combinational-logic SET rate.
  • Keywords
    digital circuits; ion beam effects; radiation hardening (electronics); IC error rate; SEU static-latch hardening techniques; advanced technology node hardened-electronics; combinational-logic single-event transient rate; deep submicron processes; digital circuits; heavy ion-induced digital single-event transients; radiation effects; single event upset; transient propagation; transient pulse width; Application specific integrated circuits; Circuit testing; Cranes; Digital circuits; Error analysis; Latches; Logic devices; Radiation effects; Radiation hardening; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.839173
  • Filename
    1369514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1189263