DocumentCode :
1189668
Title :
Total ionizing dose effects on flash-based field programmable gate array
Author :
Wang, J.J. ; Samiee, S. ; Chen, H.-S. ; Huang, C.-K. ; Cheung, M. ; Borillo, J. ; Sun, S.-N. ; Cronquist, B. ; McCollum, J.
Author_Institution :
Actel Corp., Mountain View, CA, USA
Volume :
51
Issue :
6
fYear :
2004
Firstpage :
3759
Lastpage :
3766
Abstract :
The total ionizing dose effect on a commercial Flash-based field programmable gate array is investigated by gamma ray radiation. The floating-gate threshold and logic propagation delay are measured with respect to the total dose. A physical model is also developed to express the threshold in terms of total dose for both unbiased- and biased-radiation conditions. Experimental data of the threshold fit this model for extracting the modeling parameters. The modeling predictions match further experimental data very well for low to moderate total dose. Using modeling and SPICE simulation together, the prediction of the propagation delay is compared to the experimental data. The biased condition has a good fit while the unbiased prediction over-degrades the propagation delay with respect to the experimental data.
Keywords :
SPICE; delays; dosimetry; field programmable gate arrays; gamma-ray effects; transistors; SPICE simulation; biased radiation condition; flash-based field programmable gate array; floating gate transistor; gamma ray radiation; ionizing radiation effects; logic propagation delay; modeling simulation; nonvolatile memory; total ionizing dose effects; unbiased radiation condition; Circuit testing; Field programmable gate arrays; Ionizing radiation; Logic devices; Nonvolatile memory; Predictive models; Programmable logic arrays; Propagation delay; Radiation effects; Switches;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2004.839255
Filename :
1369555
Link To Document :
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