Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate

Author

Shoji, H. ; Uchida, T. ; Kusunoki, T. ; Matsuda, M. ; Kurakake, H. ; Yamazaki, S. ; Nakajima, Kensuke ; Ishikawa, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

6

Issue

10

fYear

1994

Firstpage

1170

Lastpage

1172

Abstract

A uniform In/sub 0.05/Ga/sub 0.95/As ternary substrate was grown by using liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material at a constant temperature, and InGaAs/InGaAsP strained single quantum well (SQW) lasers were fabricated on the substrate for the first time. The lasers lased at 1.03 μm and exhibited low threshold current density of 222 A/cm² and excellent characteristic temperature of 221 K, showing that the ternary substrate has a sufficient quality for laser fabrication.

Keywords

Debye temperature; III-V semiconductors; crystal growth from melt; current density; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor lasers; substrates; 1.03 mum; 221 K; GaAs source material; In/sub 0.05/Ga/sub 0.95/As ternary substrate; In/sub 0.25/Ga/sub 0.75/As/InGaAsP; InGaAs; InGaAs/InGaAsP strained single quantum well lasers; InGaAsP; characteristic temperature; constant temperature; laser fabrication; liquid encapsulated Czochralski technique; low threshold current density; strained SQW lasers; substrate; ternary substrate; Carrier confinement; Electrodes; Gallium arsenide; Optical buffering; Optical device fabrication; Particle beam optics; Quantum well lasers; Stimulated emission; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.329628

Filename

329628